With the development of the economy, the electronic components industry has developed rapidly, and the components such as diodes and stand-alone chips have become more and more mature. Someone asked what a Schottky diode is, its principle and how the structure works. Schottky diodes are low-power, high-current, ultra-high-speed semiconductor components in recent years. The principle of its structure is as follows.

What is a Schottky diode? What is the principle and structure of the Schottky diode?

Schottky barrier diodes, referred to as Schottky diodes for short, are low-power, high-current, ultra-high-speed semiconductor components in recent years. The reverse recovery time period is very short (can be as small as a few nanoseconds), the forward voltage drop is only 0.4V, and the rectified current can be as high as thousands of amperes. This excellent performance is unmatched by fast-recovery diodes. Most of the small and medium power Schottky rectifier diodes are packaged.

Schottky diode principle and structure working principle

1. The basic principle is: in Schottky diode, what is Schottky diode, Schottky diode principle metal (such as lead) and semiconductor (N-type silicon wafer) contact surface, use the established Schottky to Block reverse voltage. There is a global difference between Schottky and PN junction rectification efficiency working principles. Its withstand voltage level is only about 40V. Its specialty is: the switching efficiency is particularly fast: the reverse recovery period is particularly short. Therefore, it can be made into switching diodes and low-voltage high-current rectifier diodes.

2. The working principle of Schottky diode structure: It is made of precious metal (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode. The barriers established on the contact surfaces of the two have rectification performance. Most of them are-semiconductor components. Because there are many electronic devices in N-type semiconductors, and there are only a small amount of free electrons in noble metals, the electronic devices diffuse from the high content of B to the low content of A. Obviously, there are no holes in metal A, and there will be no diffusion of holes from A to B. As electrons continue to diffuse from B to A, the content of electronic devices in the surface layer of B gradually decreases, and the surface layer is destroyed by the Ministry of Light Industry, thus establishing a potential barrier. The direction of the electric field is B→A. But below the electric field efficiency, the electronic devices in A will also move from A to B, which weakens the electric field established by the diffusion operation. When the necessary width of the space charge region is established, the drift operation of the electronic device caused by the electric field and the diffusion operation of the electronic device caused by the difference in content are up to the corresponding balance, which establishes the Schottky barrier.

At present, Schottky diodes are used in many fields at this stage, and Schottky diodes are also an indispensable part of electronic components. Schottky diodes not only enhance the overall national strength, but also promote the economic field and further improve the information field, and improve people's living standards.


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